High-temperature stable spin-on carbon materials for advanced pattern transfer applications

Jakub Koza; Caroline Evans; Runhui Huang; Jamie Storie; Vandana Krishnamurthy; Douglas Guerrero

doi:10.1117/12.2628988

13 June 2022 High-temperature stable spin-on carbon materials for advanced pattern transfer applications

Jakub Koza, Caroline Evans, Runhui Huang, Jamie Storie, Vandana Krishnamurthy, Douglas Guerrero

Proceedings Volume PC12055, Advances in Patterning Materials and Processes XXXIX; PC1205501 (2022) https://doi.org/10.1117/12.2628988
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

In recent years a strong demand has arisen for spin-on carbon (SOC) materials compatible with high-temperature processes. This requirement is to enable usage of high-temperature SOC (HTSOC) materials in integration schemes utilizing chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) processes. In addition to compatibility with the high-temperature deposition processes, planarization requirements and/or chemical-mechanical polishing compatibility are often critical. To answer these new challenging requirements, we have developed a family of HTSOC materials that fulfills these critical needs. In this paper we present a successful development of pattern transfer process using our HTSOC with EUV lithography. We also present the capability of the HTSOC to be used as a mandrel in self-aligned double patterning (SADP) utilizing high-temperature CVD deposition of the spacer. The properties of the next-generation HTSOC materials that enable these processes will be discussed in detail and compared to previous HTSOCs material, conventional low-temperature SOCs, as well as amorphous carbon (aC).

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Jakub Koza, Caroline Evans, Runhui Huang, Jamie Storie, Vandana Krishnamurthy, and Douglas Guerrero "High-temperature stable spin-on carbon materials for advanced pattern transfer applications", Proc. SPIE PC12055, Advances in Patterning Materials and Processes XXXIX, PC1205501 (13 June 2022); https://doi.org/10.1117/12.2628988

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KEYWORDS

Carbon

Chemical vapor deposition

System on a chip

Atomic layer deposition

Deposition processes

Chemical mechanical planarization

Double patterning technology

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